Silicon carbide semiconductors

Infineon Technologies, ROHM Semiconductor, STMicroelectronics, Mitsubishi Electric, Toshiba Corporation and Wolfspeed are prominent SiC developers in the organization data. Their work spans MOSFETs, modules, diodes, materials and manufacturing. Recent commercial signals include ROHM devices in BMW Neue Klasse vehicles in September 2026 and L&T Semiconductor Technologies’ in-house device and module unveiling for EV fast chargers that month.

Deep Concept and Pallidus are the startup profiles with specific SiC activity in the data. Deep Concept works on chip-embedded SiC MOSFET switching cells and packaging, while Pallidus commercializes high-purity SiC materials using its M-SiC technology. The profiles describe different parts of the value chain, but do not provide comparative evidence to rank either company as the most promising.

Zhejiang University, Chinese Academy of Sciences CAS and Xidian University are prominent research contributors in the profiles. Zhejiang reports work on a high-voltage floating-island JBS diode; Chinese Academy of Sciences studies 4H-SiC wafer polishing and device behavior; Xidian investigates 4H-SiC epitaxy and super-junction JBS fabrication. Their work spans device design and materials processing.

Recorded grant funding totals $637,252,578 across 157 grants since 2020. This is the aggregate funding figure in the landscape data, not a single SiC-specific financing round. Listed funding-round entries include broader semiconductor and industrial investments, so they should not be treated as direct evidence of capital raised by a SiC-focused company.

ROHM Semiconductor leads the listed patent holders with 138 patents, followed by Taiwan Semiconductor Manufacturing Company with 135 and Toshiba Corporation with 81. Other prominent holders include Infineon Technologies and Wolfspeed, each with 63, and Mitsubishi Electric with 53. These figures identify leading holders in the patent data, rather than measuring the commercial value of their portfolios.

No: patent activity declined 53% in the last-12-month comparison with the previous 12 months. The data records 2,142 patents in the defined 24-month window. Publication activity also edged down, by 1.4% year over year. These indicators describe recent recorded activity and do not establish whether the underlying market or manufacturing capacity is shrinking.

In September 2026, L&T Semiconductor Technologies unveiled its first in-house SiC power modules and devices for EV fast chargers. That month, Navitas Semiconductor was selected to develop next-generation 10 kV SiC power semiconductors. Recent research also examines irradiation-related degradation across planar and trench MOSFET structures, connecting device architecture to reliability in demanding environments.

The main approaches are Power MOSFETs, Schottky and MPS diodes, JFETs, bipolar devices, and wafer and epitaxy engineering. MOSFETs switch power efficiently but face gate-oxide and short-circuit reliability constraints. Diodes target low-loss rectification; JFETs can bring drive-circuit complexity. Bipolar devices suit high-voltage needs, while wafer and epitaxy work addresses the material quality underlying every device type.

The listed applications are electric vehicles and charging (2,754 documents), renewable energy and grid (1,447), industrial power and motor drives (1,556), data centers and computing (1,399), and aerospace and rail (98). These uses rely on SiC power devices for conversion and switching, with different priorities for efficiency, power density, reliability and thermal management.