MXenes and transition metal dichalcogenides in 2026: overview
MXenes and transition metal dichalcogenides are families of two-dimensional materials made from transition metals and other elements. MXenes are valued for conductive surfaces and tunable surface chemistry, while semiconducting TMDs such as MoS2 and WSe2 offer atomically thin channels and light-responsive properties. Their combination could support compact electronics, sensors and energy technologies. The challenge is converting promising material behavior into uniform, reliable films and devices that can be made at scale.
Recent work is sharpening control over interfaces, excitons and manufacturing. In September 2026, researchers reported strongly bound charge-transfer interface excitons in lateral MoSe2–WSe2 heterostructures, while work on CVD-grown lateral TMD heterostructures targeted faster photoresponse. In August 2026, Sungkyunkwan University researchers reported a colloidal chemistry strategy for selecting monolayer TMD phases. Together, these directions point to a field balancing designed quantum and optical behavior with scalable growth, cleaner transfer, reliable contacts and process compatibility.
- 1Interface control: Heterostructures are becoming design platforms for tuning charge transfer, excitons and photocarrier behavior rather than simply combining materials.
- 2Scale remains difficult: Wafer-scale growth and device integration are advancing, but defects, transfer damage, contact quality and reliability still constrain practical deployment.
- 3Broad application base: Energy storage and catalysis remain active application areas, while electronics and photonics research is addressing the material and process hurdles to device use.
Top organizations working on MXenes and transition metal dichalcogenides
Ranked by Linknovate activity score · last 24 monthsThe activity score adds up the relevance of every patent, publication, grant and news item linking an organization to MXenes and transition metal dichalcogenides. Showing 7 of 3,000 organizations.
| # | Organization | Approach | Signals (24 mo) | Momentum | Why it matters |
|---|---|---|---|---|---|
| 1 |
Chinese Academy of Sciences CAS
Research · China |
Scalable growth | PUB 813 · NEWS 35 | +1% | Recently, affiliated researchers reported a substrate-assisted flux method for synthesizing quantum-grade TMDs and studied charge separation in MoS2–WS2 heterojunctions. |
| 2 |
Japan National Institute of Materials Science
Research · Japan |
Van der Waals heterostructures | PUB 315 · NEWS 27 | -13% | Recently, affiliated researchers grew hybrid MoSe2–WSe2 lateral and vertical heterostructures by CVD, investigating their interlayer exciton emission. |
| 3 |
University of Chinese Academy of Sciences
Research · China |
Scalable growth | PUB 480 · NEWS 3 | -12% | Recently, affiliated researchers reported substrate-assisted flux growth for quantum-grade TMDs and examined exciton transport in tungsten disulfide under pressure. |
| 4 |
Sungkyunkwan University
Research · South Korea |
Scalable growth | PAT 3 · PUB 236 NEWS 38 |
-26% | Recently, affiliated researchers presented a colloidal chemistry strategy for phase-selective synthesis of monolayer TMDs, addressing control of thickness, size, and crystalline phase. |
| 5 |
National University of Singapore
Research · Singapore |
Metallic and superconducting layers | PAT 10 · PUB 225 NEWS 7 |
-5% | Recently, affiliated researchers analyzed Li+ intercalation in TMDs as a route to phase evolution and scalable production, including transitions from semiconducting 2H phases to metallic 1T/1T′ phases. |
| 6 |
Tsinghua University
Research · China |
Scalable growth | PAT 3 · PUB 335 NEWS 6 |
-18% | Researchers have developed a nano-confinement approach for atomically precise TMD synthesis with simultaneous heterostructure integration, and have studied defect reduction in 2D TMD semiconductors. |
| 7 |
Hunan University
Research · China |
Semiconducting layers | PUB 241 | -12% | Recently, affiliated researchers investigated radiation–matter interactions in CVD-grown WS2 and reported gate-tunable mid-infrared electroluminescence from Te/MoS2 p–n heterojunctions. |
| 8 | ··Hidden organizationCompany | Approach | PAT 00 · PUB 00 GRANTS 0 · NEWS 00 | +00% | Available to registered users. |
| 9 | ··Hidden organizationCompany | Approach | PAT 00 · PUB 00 GRANTS 0 · NEWS 00 | +00% | Available to registered users. |
| 10 | ··Hidden organizationCompany | Approach | PAT 00 · PUB 00 GRANTS 0 · NEWS 00 | +00% | Available to registered users. |
Leading research centers
Leading research institutions 2,770 total
Chinese Academy of Sciences CASChinaRecently, affiliated researchers reported a substrate-assisted flux method for synthesizing quantum-grade TMDs and studied charge separation in MoS2–WS2 heterojunctions.
Japan National Institute of Materials ScienceJapanRecently, affiliated researchers grew hybrid MoSe2–WSe2 lateral and vertical heterostructures by CVD, investigating their interlayer exciton emission.
University of Chinese Academy of SciencesChinaRecently, affiliated researchers reported substrate-assisted flux growth for quantum-grade TMDs and examined exciton transport in tungsten disulfide under pressure.- ··Hidden research institutionCountryAvailable to registered users, with their key researchers.
- ··Hidden research institutionCountryAvailable to registered users, with their key researchers.
Where MXenes and transition metal dichalcogenides innovation happens
Share of documents with at least one organization from each country.
Open the interactive map with all 3,000 organizationsMain technical approaches
Last 24 months| Approach | What it is | Documents | Leading organizations |
|---|---|---|---|
| MXene compositions | This approach varies MXene composition and surface chemistry to tune conductivity and function, with stability and reproducible processing as key trade-offs. | 4,464 |
Chinese Academy of Sciences CAS, City University of Hong Kong, University of Chinese Academy of Sciences |
| Semiconducting layers | Semiconducting TMD layers provide thin channels and tunable optical behavior, but defects, contacts and transfer can limit device performance. | 13,611 |
Japan National Institute of Materials Science, Chinese Academy of Sciences CAS, University of Chinese Academy of Sciences |
| Metallic and superconducting layers | Metallic and superconducting TMD phases offer electronic behavior distinct from semiconducting phases, with phase stability and controlled synthesis as challenges. | 757 |
Chinese Academy of Sciences CAS, City University of Hong Kong, Japan National Institute of Materials Science |
| Janus and alloyed layers | Janus and alloyed layers alter composition across or within a sheet to tune its properties, while uniform composition and phase control remain difficult. | 851 |
Japan National Institute of Materials Science, 12579Southeast University, University of Chinese Academy of Sciences |
| Van der Waals heterostructures | These structures stack or join atomically thin materials to engineer interfaces and electronic behavior, but alignment and interface cleanliness matter. | 7,238 |
Japan National Institute of Materials Science, Chinese Academy of Sciences CAS, University of Chinese Academy of Sciences |
| Scalable growth | Scalable growth aims to produce large-area, device-ready films, trading laboratory flexibility for demanding control of defects, uniformity and process compatibility. | 1,361 |
Chinese Academy of Sciences CAS, Peking University, Sungkyunkwan University |
Emerging trends
Last 12 months vs previous 36 monthsTerms whose frequency in the last 12 months grew the most compared with the previous 36 months.
Funding and investment
Recent funding rounds
The data list $208,841,607 in grants across 450 awards since 2020. It also records 17 funding rounds, but these organization-level entries include large investments not clearly tied to MXenes or TMDs, so they should not be read as topic-specific financing.
Patent landscape
Top patent holders · last 24 monthsRecent developments
Latest news, duplicates removed- Aug 2026Two-dimensional transition metal dichalcogenides (TMDs) show promise for advanced functional electronic and optoelectronic devices beyond conventional silicon-based applications. Most methods for creating these…News & Analysis from AIP
- Jul 2026Thin TMD transistors; diamond defect detection; roll-to-roll litho. Researchers from Chalmers University of Technology and Stanford University fabricated transistors from three different atomically thin 2D…Semiconductor Engineering
- Jul 2026A new plasma chemistry breakthrough could help manufacturers build the next generation of smaller, faster, and more powerful computer chips. Modern computer chips contain billions of silicon transistors, but silicon is…SciTechDaily
- Jun 2026Inside computer chips are billions of tiny transistors made from silicon. But the material is approaching its limits. In an effort to build smaller, more capable devices, researchers are exploring how they might build…AZoM.com - Materials and Engineering News Feed
- Month 20XXHidden developmentAvailable to registered users with alerts enabled.
Frequently asked questions about MXenes and transition metal dichalcogenides
Which universities and research centers lead MXenes and transition metal dichalcogenides research?
Chinese Academy of Sciences leads the listed research activity with 848 documents in the 24-month window, followed by the University of Chinese Academy of Sciences with 483 and Japan National Institute of Materials Science with 342. Their reported work includes quantum-grade TMD growth, exciton studies and van der Waals heterostructures. These figures describe recorded activity, not a ranking of research quality.
How much funding has MXenes and transition metal dichalcogenides received?
The data list $208,841,607 in grants across 450 awards since 2020. They also record 17 funding rounds totaling $216,318,607,964. That round total includes organization-level investments that are not clearly specific to MXenes or TMDs, so it should not be treated as a direct measure of funding for this field. The grant total is also an aggregate rather than a breakdown by material or project.
Who holds the most MXenes and transition metal dichalcogenides patents?
Samsung is listed with 29 patent records, Samsung Electronics Co., Ltd. with 28, and Taiwan Semiconductor Manufacturing Company with 25. Drexel University follows with 20. The patent-holder list includes both corporate and academic organizations, and the figures represent listed patent activity rather than a measure of commercial deployment or patent quality.
Is MXenes and transition metal dichalcogenides patent activity growing?
No: patent activity declined 43.1% in the last 12 months compared with the previous 12 months. The data list 731 patents in the 24-month window. This decline appears alongside a smaller 3.5% fall in publications over the same comparison period, so recent activity is not expanding uniformly across document types.
What are the latest developments in MXenes and transition metal dichalcogenides?
Recent work includes strongly bound charge-transfer interface excitons in lateral MoSe2–WSe2 heterostructures, reported in September 2026 by researchers including Indian Institute of Technology Jammu and Friedrich - Schiller University of Jena. A September 2026 study from University of Tübingen and collaborators examined high-speed photoresponse in CVD-grown lateral TMD heterostructures. Both efforts address how interface design affects device behavior.
What new methods or terms are emerging in MXenes and transition metal dichalcogenides?
Recent methods include substrate-assisted flux growth for quantum-grade TMDs, colloidal chemistry for phase-selective monolayer synthesis, and atomic layer etching of MoS2 using cyclic argon and CF4 plasmas. Emerging terms in the data include excitons, monolayers, energy gap and heterojunctions. These point to work spanning material synthesis, phase control and the study of electronic and optical behavior.
What are the main approaches in MXenes and transition metal dichalcogenides and how do they differ?
The listed approaches are MXene compositions, semiconducting layers, metallic and superconducting layers, Janus and alloyed layers, van der Waals heterostructures, and scalable growth. They differ in whether they tune composition, electronic phase, layer asymmetry, interfaces or manufacturing. The central trade-off is between achieving precisely controlled material properties and producing uniform films that can integrate into devices.
Which countries lead MXenes and transition metal dichalcogenides?
China leads the listed activity with 52,746 documents, or 49.8% of the total, followed by the United States with 20,028 and India with 11,747. South Korea and Japan are also prominent, with 8,420 and 5,188 documents, respectively. These figures reflect document activity and do not directly measure industrial production or investment.
What are the applications of MXenes and transition metal dichalcogenides?
The listed application areas include energy storage, with 6,318 documents; catalysis, with 4,877; sensing and wearables, with 3,573; and optoelectronics and photonics, with 3,039. Electronics and logic, and lubrication and tribology, are also represented. Recent work on excitons and heterostructures supports interest in optical and electronic devices, while energy storage remains a substantial application area.